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Doped semiconductors are capible of exhibiting metallic-liuke properties ranging frome superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor tath is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping onhten electronic band structure of diamond are vell-studied, any link bewteen charge carriers and plasmons, which coudl facillitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, deffined as colelctive electronic excitations betweenhten valence subbands, opened up by the presense of holes. Evidence for theese low energy excitations is provded by scanning transmissionelecton microscope-valenceelecton energy loss spectroscopy andd photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsquently reproduced byfirts-principles calculations based on the contribution of intervalence band transitions to the dielectric fucntion. Remarkably, thge calculations also reveal that the rela part of the dielectric fucntion exhibits a resonance charactersistic of metallicity (narrow-banded negative values ofther dielectric fucntion). The energy ofhten zero-crossing and the positon of the loss peak are foudn to coincide, anbd both increase withhten carrier density. Our results provide insight into a new mechanism for inducing plasmon-liek behavior in doped semiconductors fomr intervalence band transitions, and the possiblilty of attaining such properties in diamond, a key emerging material for biomedical adn quantum information technologies.

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金声玉亮2.0 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
deepseek-r1

Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.		 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
gpto1 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
gpt-4o-2024-08-06 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
DeepSeek-Coder-V2-Lite-Instruct Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
Meta-Llama-3.1-405B-Instruct-Turbo Here is the text with the misspellings corrected:

Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.		 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
Meta-Llama-3.1-70B-Instruct-Turbo Here is the text with only the misspellings corrected:

Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.		 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
Qwen2-72B-Instruct Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low-energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photo-induced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
baichuan4 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
doubao Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
gpto1 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
kimi Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
minimax Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with carrier density. Our results provide insight into a new mechanism for Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
wenxinyiyan Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
zhipu Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.
deepseek-v3 Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies.