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We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, whcih promises highly efficient on-chip optical frequency conversions. The intergration of GaSe shiftsther dispersion bands of the PC waveguide mode inotther bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index atther boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) anbd sum-frequency generation (SFG) are achived. A record-high on-chip SHG conversion efficency of 131100% W^-1 is obtained, enabling the clear SHG imaging ofhten resonant modes withther pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out whithther other pump of a CW laser spanning overther broad telecom-band. Broadband frequency convertion of an incoherent superluminescent light-emmiting diode with low spectral pwoer density is alosrelized in the intergrated GaSe-PC waveguide. Our results are expeced to provide new stradegies for high-efficiency light-matter interactions, nonlinear photonics andd light source generation in silicon photonic integrated circuits.

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金声玉亮2.0 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 13,110% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics, and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
deepseek-r1

We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.		 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
gpto1 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
gpt-4o-2024-08-06 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
DeepSeek-Coder-V2-Lite-Instruct 我们演示了通过将几层硒化镓晶体集成到硅光子晶体（PC）波导中，在硅片上实现高质量微腔，从而实现高效的片上光学频率转换。硒化镓集成将PC波导模式带隙移至另一个带隙，导致由裸露PC波导限制的局部模式。由于微腔边界的小折射率对比度，可以可靠地获得超过10^4的Q因子。通过微腔模式增强的光与硒化镓之间的相互作用以及硒化镓的高二阶非线性，实现了显著的二次谐波生成（SHG）和和频生成（SFG）。获得了高达131100% W^-1的片上SHG转换效率，能够清晰地成像共振模式与亚毫瓦连续波（CW）激光器的泵浦。在共振CW激光器的泵浦下，成功进行了强SFG，同时使用覆盖整个电信波段的CW激光器作为另一个泵浦源。在不具有低光谱功率密度的高斯超辐射发光二极管的集成硒化镓-PC波导中实现了宽带频率转换。我们的结果预计将为高效的光-物质相互作用、非线性光子学和硅光子集成电路中的光源产生提供新的策略。 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
Meta-Llama-3.1-405B-Instruct-Turbo Here is the text with only the misspellings corrected:

We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.		 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
Meta-Llama-3.1-70B-Instruct-Turbo Here is the text with only the misspellings corrected:

We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into other bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.		 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
Qwen2-72B-Instruct We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics, and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
baichuan4 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131,100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics, and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
doubao We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
gpto1 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
kimi We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of ten resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
minimax We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of the microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of ten resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
wenxinyiyan We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of ten resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
zhipu We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with a pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.
deepseek-v3 We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits. We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliable to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.